silicon single crystal

A temperature sensor based single crystal silicon diaphragm was proposed and studied.

理论分析了单晶硅膜温度传感的机理,通过计算得到了硅膜厚度与温度测量范围之间的关系.

Keywords: micro-gyroscope , silicon single crystal, three-axis angular-rate sensing, natural frequency and mode shapes.

关键词: 微型陀螺仪 、 矽单晶 、 三轴 角速率 感测 、 振动自然频率与模态.

Zr-Ni-N coextruded film is deposited on high speed steel and single crystal silicon slice by using vacuum arc deposition technique. The influences of low energy nitrogen ion beam aid deposition on coating structure, morphology and hardness of Zr-Ni-N film are studied.

采用多弧离子镀技术在高速钢和单晶硅基体上制备Zr-Ni-N复合薄膜，研究了低能氮离子束对Zr-Ni-N涂层结构、表面形貌和硬度的影响。

Drawing of single crystal silicon in closed thermal system

密闭热系统中拉制硅单晶

We made the Czochralski silicon single crystal with a diameter of 12 inches.

直径12英寸直拉单晶硅研制成功.

This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.

介绍了直拉法生长单晶硅的基本原理及工艺条件。

Diamond-like carbon ( DLC ) films were prepared on the single crystal silicon substrate by way of DC-RFPECVD.

采用射频 - 直流等离子体增强 化学气相沉积 技术在单晶硅衬底上沉积了类金刚石薄膜.

Mechanical Strength Research by Three-Point Bending Method in Nitrogen-Doped Silicon Single Crystal

用三点弯方法研究微氮硅单晶机械强度

In this paper, the present status of the silicon single Crystal floating zone doping process is essentialized.

本文介绍了目前区熔掺杂方法的现状、区熔气相掺杂的优点和基本原理及工艺。

GaN/ Si based devices are of great interest because the silicon substrate has superior properties, such as low-cost, high thermal conductivity, potential applications in the integration of the microelectronics and opto-electronics, mature technology in growth of Si single crystal with large diameter.

由于硅具有价格低、热导率高、大直径单晶生长技术成熟等优势以及在光电集成方面的应用潜力，GaN/Si基器件成为一个研究热点。